2SB1122 / 2sd1622 no.2040-1/5 applications voltage regulators relay drivers, lamp drivers, electrical equipment. features adoption of fbet process. ultrasmall size making it easy to provide high-density hybrid ic s. specifications ( ) : 2SB1122 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)1 a collector current (pulse) i cp (--)2 a collector dissipation p c 500 mw mounted on a ceramic board (250mm 2 ? 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)50v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na marking 2SB1122 : be 2sd1622 : de continued on next page. www.semiconductor-sanyo.com/network ordering number : en2040b 31710ea tk im / o1003tn (koto)/92098ha (kt)/4107ki/9266at, ts specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2SB1122 / 2sd1622 pnp / npn epitaxial planar silicon transistors low-frequency power amplifier applications
2SB1122 / 2sd1622 no.2040-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)1a 30 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (12)8.5 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)500ma, i b =(--)50ma (--180)120 (--500)300 mv base-to-emitter saturation voltage v be (sat) i c =(--)500ma, i b =(--)50ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v turn-on time t on see specified test circuit. (40)40 ns storage time t stg see specified test circuit. (300)350 ns fall time t f see specified test circuit. (30)30 ns * : the 2SB1122 / 2sd1622 are classified by 100ma h fe as follows: rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 package dimensions switching time test circuit unit : mm (typ) 7007b-004 v r r b 25v --5v + + 50 input output r l 50 100 f 470 f pw=20 s i c =10i b1 = --10i b2 =500ma (for pnp, the polarity is reversed) i b1 d.c. 1% i b2
2SB1122 / 2sd1622 no.2040-3/5 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a h fe -- i c h fe -- i c collector current, i c -- ma dc current gain, h fe collector current, i c -- ma dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma f t -- i c cob -- v cb collector current, i c -- ma gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf --1.0 --0.6 --0.4 --0.2 --0.8 0 0 --1 --2 --5 -- 4 -- 3 i b =0 ma itr08877 2SB1122 --1ma --2ma --8ma --6ma --4ma --10ma --12ma 1.0 0.6 0.4 0.2 0.8 0 012 5 4 3 i b =0 ma itr08878 2ma 1ma 9ma 8ma 7ma 5ma 6ma 4ma 3ma 10ma 2sd1622 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --1200 --1000 --800 --600 --400 --200 0 itr08879 ta=75 c 25 c --25 c 2SB1122 v ce = --2v 0 0.2 0.4 0.6 0.8 1.2 1.0 1200 1000 800 600 400 200 0 itr08880 ta=75 c 25 c --25 c 2sd1622 v ce =2v 523 23 55 10 7 7 100 100 10 2 5 7 5 3 2 3 itr08883 2SB1122 2sd1622 1.0 10 7 3 5 10 2 3 5 2 27 35 100 27 35 7 5 itr08884 2SB1122 2sd1622 2 3 5 5 7 10 7 1000 2 3 5 7 100 23 5 --10 23 5 --100 23 7 7 57 --1000 itr08881 2SB1122 v ce = --2v ta=75 c 25 c --25 c 2 3 5 5 7 10 7 1000 2 3 3 5 7 100 23 5 10 23 5 100 23 7 7 57 1000 itr08882 2sd1622 v ce =2v ta=75 c 25 c --25 c v ce =10v f=1mhz for pnp, minus sign is omitted for pnp, minus sign is omitted
2SB1122 / 2sd1622 no.2040-4/5 a s o p c -- ta collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv v be (sat) -- i c v be (sat) -- i c collector current, i c -- ma collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v 2 5 7 7 3 2 5 3 --100 --10 --1000 23 57 57 7 --10 23 5 --100 2 --1000 itr08885 2SB1122 i c / i b =10 ta=75 c 25 c --25 c 2 5 7 7 3 2 5 3 --1.0 --10 23 57 57 7 --10 23 5 --100 2 --1000 itr08887 2SB1122 i c / i b =10 75 c 25 c ta= --25 c 2 5 7 7 3 2 5 3 1.0 10 23 57 57 7 10 23 5 100 2 1000 itr08888 2sd1622 i c / i b =10 75 c 25 c ta= --25 c 2 5 7 7 3 2 5 3 100 10 1000 23 57 57 7 10 23 5 100 2 1000 itr08886 2sd1622 i c / i b =10 ta=75 c 25 c -- 2 5 c 0.1 0.01 5 7 7 1.0 5 3 3 2 2 3 2 1.0 10 257 3 100 257 3 57 itr08889 0 1.4 1.2 0.8 1.0 0.6 0.4 1.3 0.5 0.2 0 20 40 60 100 120 160 140 80 itr08890 mounted on a ceramic board (250mm 2 ? 0.8mm) no heat sink 2SB1122 / 2sd1622 10ms 1ms 100ms dc operation 2SB1122 / 2sd1622 i cp =2a i c =1a for pnp, minus sign is omitted ta=25 c single pulse mounted on a ceramic board (250mm 2 ? 0.8mm)
2SB1122 / 2sd1622 no.2040-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of march, 2010. specifications and information herein are subject to change without notice.
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